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DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958
Data Sheet No. GPDG-101-1B
1 AMP HIGH RELIABILITY SILICON DIODES
FEATURES MECHANICAL SPECIFICATION
R
PROPRIETARY SOFT GLASS JUNCTION PASSIVATION FOR SUPERIOR RELIABILITY AND PERFORMANCE VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION (Solder Voids: Typical < 2%, Max. < 10% of Die Area)
ACTUAL SIZE OF DO-41 PACKAGE
SERIES GP100 - GP110 DO - 41
LL BD (Dia)
EXTREMELY LOW LEAKAGE AT HIGH TEMPERATURES LOW FORWARD VOLTAGE DROP 1A at TA = 75 C WITH NO THERMAL RUNAWAY
MECHANICAL DATA
LL
Case: JEDEC DO-41, molded epoxy (U/L Flammability Rating 94V-0) Terminals: Plated axial leads Soldering: Per MIL-STD 202 Method 208 guaranteed Polarity: Color band denotes cathode Mounting Position: Any Weight: 0.012 Ounces (0.34 Grams)
LD (Dia) Color Band Denotes Cathode
BL
S RoH
PLI OM C
ANT
Sym BL BD LL LD
Minimum In mm 0.160 0.103 1.00 0.028 4.1 2.6 25.4 0.71
Maximum In mm 5.2 0.205 0.107 0.034 2.7 0.86
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
2HG A 6F 3(c)! # (c)(c)! #1 (c)(c)& 6! 9 3(c)E #$) ! 71 % ) " )#& 2(c)& 6! 9 (c)(c) 3#3 9 ! # 7 D(c)A @ ! 9 8(c)0 (c)' 7(c) (c)"6! (c) 54 1 % )$1 &! CB 7 ( % ! ' %| 21 )!" 3 ! 0 (c)! ( (c)' ! (c)! #$ (c)" ! (c) ! (c) (c) #! & %$ #! |
PARAMETER (TEST CONDITIONS)
Series Number
SYMBOL
X5HA AEAEA A
RATINGS
ecc ae a aaa a YUU U O x O O O NI I 5aX8UXOHEO8HEII6HEC EEE E
UNITS
Ip

Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range
(c) Xii3 iD(c) D3 D 5iHDD i3D (R) (c) | 35 D3 5 3D3 6i8H* | 1/4
C TT
hge d i8fDc

8u ~X{ z | } |
y x
ba 3
Typical Thermal Resistance, Junction to Ambient (Note 1)
R
Xv w
6 R
A
Maximum Average DC Reverse Current At Rated DC Blocking Voltage
@ T = 25 C @ T = 125 C
IQ
C/W pF C
y
t Xs ut r p q
YW UT XV 6
Maximum Full Cycle Reverse Current @ T = 75 C (Note 1)
3/4 1/2
IS
o
5
Maximum Forward Voltage at 1 Amp DC
A A
V
Xl m
I
k
Average Forward Rectified Current @ T = 75 C, Lead length = 0.375 in. (9.5 mm) Peak Forward Surge Current ( 8.3 mSec single half sine wave superimposed on rated load)
n
vt 6u
Maximum Peak Recurrent Reverse Voltage
P I
Vt

hh XXg
uu 8Xu
X8i jj
X8
oo Xo
Xi i
sr 6
Maximum RMS Voltage
Vq
yy 8X
fe XXd
uo 88/
XX
8
o Xn
Xe i
u x
Maximum DC Blocking Voltage
Vw
yy XXyu
XX
oo 8Xo
X8
X8
Xi
Xe e
VOLTS
AMPS
VOLTS A
H5
DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958
Data Sheet No. GPDG-101-2B
1 AMP HIGH RELIABILITY SILICON DIODES
RATING & CHARACTERISTIC CURVES FOR SERIES GP100 - GP110

1.2
Average Forward Current, Io (Amperes)
Peak Forward Surge Current (Amperes)
1.0
0.8
0.6
0.2
0 0
50
100
150
180
FIGURE 1. FORWARD CURRENT DERATING CURVE
Number of Cycles at 60 Hz FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
10
Instantaneous Reverse Current, I (Microamperes)
Instantaneous Forward Current (Amperes)
1.0
1.0 .1
0.1
0.01 0.6
0.7
08
0.9
1.0
1.1
1.2
1.3
Percent of Rated Peak Reverse Voltage FIGURE 4. TYPICAL REVERSE CHARACTERISTICS
Instantaneous Forward Voltage (Volts) FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE
TJ = 25 oC
Peak Forward Surge Current (Amperes)
Capacitance, pF
Reverse Voltage, (Volts) FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE
Pulse Duration (Milliseconds) FIGURE 6. PEAK FORWARD SURGE CURRENT
3 4 3 0 2 1 0 ) ( &' %
H6
(c)
Y
(c)
c|
0
40
d ca b

i eerp fc d c yw x uh t r g vspqi
c
T R S
(R)
WV XU U
hhh cg
QQ P
f e
BB (c)A
s (c) cs } X vsq
0.1
.01

(c)
* vsq
A AA3/4 A AA1/41/2
|
$
Ambient Temperature, C
q~ q { ~ | { z x rX y }ssy w vu sq XXt ropmyj nklk
!
0.4
# "
DC
7
@ 8 9
G E F IH I 6 5

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